Electronic stopping calculated using explicit phase shift factors

Predicting range profiles of low-energy (0.1–10 keV/amu) ions implanted in materials is a long-standing problem of considerable theoretical and practical interest. We combine here the best available method for treating the nuclear slowing down, namely a molecular-dynamics range calculation method, with a method based on density-functional theory to calculate electronic slowing down for each ion-target atom pair separately. Calculation of range profiles of technologically important dopants in Si shows that the method is of comparable accuracy to previous methods for B, P, and As implantation of Si, and clearly more accurate for Al implantation of Si.Peer reviewe

First-principles simulation of intrinsic collision cascades in KCl and NaCl to test interatomic potentials at energies between 5 and 350 eV

Theoretical interatomic potentials for KCl and NaCl are tested at energies 5–350 eV against experimental data from intrinsic collision cascades. The collisional scattering of Cl with Cl, K, and Na atoms was observed from Doppler-shifted γ rays depopulating an excited state in recoiling Cl36 produced through the thermal neutron capture Cl35(n,γ)36Cl. The collisional scattering was simulated with molecular dynamics. Interatomic potentials from the present Iab initioP atomic cluster calculations are proposed for the Cl-Cl, Cl-K, and Cl-Na interactions in KCl and NaCl.Peer reviewe

Scenario Evaluation with Relevance and Interest (SERI): Development and Validation of a Scenario Measurement Tool for Context-Based Learning

Context-based learning (CBL) approaches have been recommended and expanded in science education to make science more relevant to students by connecting science content with students’ daily life. Subsequently, in order to implement CBL at school, a group of scenarios has been produced by several stakeholders. However, there is a lack of resources to measure effectively what makes a good scenario. Thus, this study aims to develop and validate a scenario evaluation instrument to examine students’ perspectives on science career-related scenarios through the lens of relevance and interest. For this purpose, 25 science career-related scenarios and a measurement tool, Scenario Evaluation with Relevance and Interest (SERI), were developed by a team of researchers for the EU funded MultiCO project. Then, lower secondary school students from three different countries, Estonia, Finland, and the UK, were asked to respond to the newly developed instrument after reading the scenarios, and their responses were analyzed by factor analyses and multivariate analysis of variance. According to the result, this instrument has good construct validity and reliability. However, it indicates one issue of discriminant validity between two factors, individual dimension and societal dimension. Also, significant gender differences were found in the Estonian sample regarding students’ perspectives on the scenarios. Possible interpretations of the results and implications of the suggested measurement tool are discussed

Transition rates and nuclear structure changes in mirror nuclei 47Cr and 47V

Lifetime measurements in the mirror nuclei 47Cr and 47V were performed by means of the Doppler-shift attenuation method using the multidetector array EUROBALL, in conjunction with the ancillary detectors ISIS and the Neutron Wall. The determined transition strengths in the yrast cascades are well described by full pf shell model calculations.Comment: Latex2e, 11 pages, 3 figure

Cutting and controlled modification of graphene with ion beams

Using atomistic computer simulations, we study how ion irradiation can be used to alter the morphology of a graphene monolayer by introducing defects of specific type, and to cut graphene sheets. Based on the results of our analytical potential molecular dynamics simulations, a kinetic Monte Carlo code is developed for modelling morphological changes in a graphene monolayer under irradiation at macroscopic time scales. Impacts of He, Ne, Ar, Kr, Xe and Ga ions with kinetic energies ranging from tens of eV to 10 MeV and angles of incidence between 0\circ and 88\circ are studied. Our results provide microscopic insights into the response of graphene to ion irradiation and can directly be used for the optimization of graphene cutting and patterning with focused ion beams

Learning Impact of a Virtual Brain Electrical Activity Simulator Among Neurophysiology Students: Mixed-Methods Intervention Study

Background:Virtual simulation is the re-creation of reality depicted on a computer screen. It offers the possibility to exercise motor and psychomotor skills. In biomedical and medical education, there is an attempt to find new ways to support students’ learning in neurophysiology. Traditionally, recording electroencephalography (EEG) has been learned through practical hands-on exercises. To date, virtual simulations of EEG measurements have not been used.Objective:This study aimed to examine the development of students’ theoretical knowledge and practical skills in the EEG measurement when using a virtual EEG simulator in biomedical laboratory science in the context of a neurophysiology course.Methods:A computer-based EEG simulator was created. The simulator allowed virtual electrode placement and EEG graph interpretation. The usefulness of the simulator for learning EEG measurement was tested with 35 participants randomly divided into three equal groups. Group 1 (experimental group 1) used the simulator with fuzzy feedback, group 2 (experimental group 2) used the simulator with exact feedback, and group 3 (control group) did not use a simulator. The study comprised pre- and posttests on theoretical knowledge and practical hands-on evaluation of EEG electrode placement.Results:The Wilcoxon signed-rank test indicated that the two groups that utilized a computer-based electrode placement simulator showed significant improvement in both theoretical knowledge (Z=1.79, P=.074) and observed practical skills compared with the group that studied without a simulator.Conclusions:Learning electrode placement using a simulator enhances students’ ability to place electrodes and, in combination with practical hands-on training, increases their understanding of EEG measurement.</p

Argon cluster impacts on layered silicon, silica, and graphite surfaces

Seven structures of covalently bonded materials are used as targets of 6 keV Ar12 cluster bombardment in classical molecular dynamics simulations. Energy deposition, cratering and Ar ranges are compared and remarkable differences are found between the structures. In particular, bombardment of a thin 2 nm silica layer on top of the Si(111) surface is shown to behave quite differently from bombardment of pure Si

Ni+-irradiated InGaAs/GaAs quantum wells: picosecond carrier dynamics

Room-temperature carrier dynamics as functions of heavy-ion implantation and subsequent thermal annealing were investigated for technologically important InGaAs/GaAs quantum wells (QWs) by means of a time-resolved up-conversion method. Sub-picosecond lifetimes were achieved at 10 MeV Ni+ doses of (20-50) x 1010 ions cm-2. The decay rates reached a maximum at the highest irradiation dose, yielding the shortest lifetime of the confined QW states of 600 fs. A simple theoretical model is proposed for the photodynamics of the carriers. The relaxation rate depended on the irradiation dose according to a power law of 1.2, while the irradiated and subsequently annealed samples exhibited a power law of 0.35. The results are qualitatively interpreted.Room-temperature carrier dynamics as functions of heavy-ion implantation and subsequent thermal annealing were investigated for technologically important InGaAs/GaAs quantum wells (QWs) by means of a time-resolved up-conversion method. Sub-picosecond lifetimes were achieved at 10 MeV Ni+ doses of (20-50) x 1010 ions cm-2. The decay rates reached a maximum at the highest irradiation dose, yielding the shortest lifetime of the confined QW states of 600 fs. A simple theoretical model is proposed for the photodynamics of the carriers. The relaxation rate depended on the irradiation dose according to a power law of 1.2, while the irradiated and subsequently annealed samples exhibited a power law of 0.35. The results are qualitatively interpreted.Room-temperature carrier dynamics as functions of heavy-ion implantation and subsequent thermal annealing were investigated for technologically important InGaAs/GaAs quantum wells (QWs) by means of a time-resolved up-conversion method. Sub-picosecond lifetimes were achieved at 10 MeV Ni+ doses of (20-50) x 1010 ions cm-2. The decay rates reached a maximum at the highest irradiation dose, yielding the shortest lifetime of the confined QW states of 600 fs. A simple theoretical model is proposed for the photodynamics of the carriers. The relaxation rate depended on the irradiation dose according to a power law of 1.2, while the irradiated and subsequently annealed samples exhibited a power law of 0.35. The results are qualitatively interpreted.Peer reviewe